Unified molecular field theory of nematic, smectic-A, and smectic-C phases

A unified mean-field molecular theory of nematic (NU), smectic A (SmA), and smectic C (SmC) liquid crystal phases, composed of uniaxial nonpolar molecules, is developed taking into account the variation of all orientational and translational order parameters in these phases. Numerical results, obtained by direct global minimization of the free energy, are presented in the form of three typical phase diagrams of different topology. Temperature variation of the relevant order parameters in different sequences of phases is analyzed for various cross sections of the phase diagrams. The present model enables one to reproduce all possible sequences of phase transitions between the given phases including isotropic (Iso)-NU-SmA-SmC, Iso-NU-SmC, Iso-SmA-SmC, and Iso-SmC. The properties of the NAC point, where the NU, SmA, and SmC structures coexist, are considered in detail and the shape of the phase diagram in the vicinity of the NAC point is compared with existing experimental data

Highly polarized injection luminescence in forward-biased ferromagnetic-semiconductor junctions at low spin polarization of current

We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near FM-S interface at low spin polarization of the current. We show that this effect can be used for an efficient polarization radiation source in a heterostructure where the accumulated spin polarized electrons are injected from $n$-S and recombine with holes in a quantum well. The radiation polarization depends on a bias voltage applied to the FM-S junction.Comment: 4 pages, 2 figure

A class of spin injection-precession ultrafast nanodevices

Spin valve ultrafast spin injection devices are described: an amplifier, a frequency multiplier, and a square-law detector. Their operation is based on injection of spin polarized electrons from one ferromagnet to another through a semiconductor layer and spin precession of the electrons in the semiconductor layer in a magnetic field induced by a (base) current in an adjacent nanowire. The base current can control the emitter current between the magnetic layers with frequencies up to several 100 GHz.Comment: 4 pages, 2 figures; minor typos corrected; to appear in Appl. Phys. Letter